2N6036

Active

STMicroelectronics

TRANS PNP DARL 80V 4A SOT32

Search across all available documentation for this part.

Active

STMicroelectronics

TRANS PNP DARL 80V 4A SOT32

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	2N6036	2N60 Series

Current - Collector (Ic) (Max) [Max]	4 A	4 - 12 A
Current - Collector Cutoff (Max) [Max]	100 µA	1 - 100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	750	750
Frequency - Transition	-	4 MHz
Mounting Type	Through Hole	Through Hole, Chassis Mount
Operating Temperature	150 °C	150 - 200 °C
Package / Case	TO-225AA, TO-126-3	TO-225AA, TO-126-3, TO-3, TO-204AA
Power - Max [Max]	40 W	40 - 150 W
Supplier Device Package	SOT-32	SOT-32
Transistor Type	PNP - Darlington	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic	3 V	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V	80 - 100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

TRANS PNP DARL 80V 4A SOT32

Part	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Operating Temperature	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Frequency - Transition
STMicroelectronics 2N6036	TO-126-3, TO-225AA	750	4 A	150 °C	SOT-32	3 V	PNP - Darlington	80 V	Through Hole	100 µA	40 W
STMicroelectronics 2N6059	TO-204AA, TO-3	750 hFE	12 A	200 °C		3 V		100 V	Chassis Mount	1 mA	150 W	4 MHz

General part information

Bipolar (BJT) Transistor PNP - Darlington 80 V 4 A 40 W Through Hole SOT-32

Technical documentation and resources