NVBG1000N170M1
ActiveSILICON CARBIDE (SIC) MOSFET – ELITESIC, 960 MOHM, 1700 V, M1, D2PAK-7L
NVBG1000N170M1
ActiveSILICON CARBIDE (SIC) MOSFET – ELITESIC, 960 MOHM, 1700 V, M1, D2PAK-7L
Description
General part information
NVBG1000N170M1
The new family of 1700V M1 planar SiC MOSFETs is optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This family has optimum performance when driven with 20V gate drive but also works well with 18V gate drive.
Technical Specifications
Parameters and characteristics for this part
| Specification | NVBG1000N170M1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 4.3 A |
| Drain to Source Voltage (Vdss) | 1700 V |
| Drive Voltage (Max Rds On, Min Rds On) | 20 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 14 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 150 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Leads | 7 Leads |
| Package Name | D2PAK, D2PAK-7 |
| Power Dissipation (Max) | 51 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 1.43 Ohm, 1.43 Ohm |
| Technology | SiCFET (Silicon Carbide), SiC (Silicon Carbide Junction Transistor) |
| Vgs (Max) Negative | -15 V |
| Vgs (Max) Positive | 25 V |
| Vgs(th) (Max) | 4.3 V |
Pricing
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