NST857BMX2T5G
ActiveBIPOLAR TRANSISTORS - BJT SS SOT23 GP XSTR PNP 45V
NST857BMX2T5G
ActiveBIPOLAR TRANSISTORS - BJT SS SOT23 GP XSTR PNP 45V
Description
General part information
NST857BMX2T5G
The PNP Bipolar Transistor is designed for use in amplification and switching applications. The device is housed in the SOT-883 package, which is designed for lower power surface mount applications. Because of its small size, it is suited for use in smartphone, smart−watch, or many other portable/wearable applications where board space comes at a premium.
Technical Specifications
Parameters and characteristics for this part
| Specification | NST857BMX2T5G |
|---|---|
| Current - Collector (Ic) (Max) | 0.1 mA |
| Current - Collector Cutoff (Max) | 15 nA |
| DC Current Gain (hFE) (Min) | 220 |
| Frequency - Transition | 100 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 0402 (1006 Metric) |
| Package Length | 1 mm |
| Package Name | 3-X2DFN |
| Package Width | 0.6 mm |
| Power - Max | 225 mW |
| Transistor Type | PNP |
| Vce Saturation (Max) | 650 mV |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources