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NTD6600N-001

NTD6600N-001

Obsolete
ON Semiconductor

MOSFET N-CH 100V 12A IPAK

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NTD6600N-001

NTD6600N-001

Obsolete
ON Semiconductor

MOSFET N-CH 100V 12A IPAK

Find alt

Description

General part information

NTD6600N-001

N-Channel 100 V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Through Hole IPAK

Technical Specifications

Parameters and characteristics for this part

SpecificationNTD6600N-001
Current - Continuous Drain (Id) (Ta)12 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)5 V
FET TypeN-Channel
Gate Charge (Max)20 nC
Input Capacitance (Ciss) (Max)700 pF
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-251-3 Short Leads, TO-251AA, IPAK
Package NameIPAK
Power Dissipation (Max)56.6 W, 1.28 W
Rds On (Max)146 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2 V

Pricing

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CAD

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Documents

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