Specification	APT60N60SCSG/TR

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	190 nC
Input Capacitance (Ciss) (Max)	7200 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D3PAK (2 Leads + Tab), TO-268-3, TO-268AA
Package Name	D3PAK
Power Dissipation (Max)	431 W
Rds On (Max)	45 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	3.9 V

SUPERJUNCTION-600V Series

Part	Input Capacitance (Ciss) (Max)	Rds On (Max)	Package / Case	Package Name	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Technology	Mounting Type	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)
Microchip Technology APT47N60BC3G	7015 pF	70 mOhm	TO-247-3	TO-247 [B]	600 V	-55 °C	150 °C	N-Channel	MOSFET (Metal Oxide)	Through Hole	3.9 V	47 A	417 W	20 V	10 V	260 nC

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