MMBT5550LT1G
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 140 V, 225 MW, 600 MA, 250 ROHS COMPLIANT: YES
MMBT5550LT1G
ActiveBIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 140 V, 225 MW, 600 MA, 250 ROHS COMPLIANT: YES
Description
General part information
MMBT5550L Series
The High Voltage NPN Bipolar Transistor is designed for general purpose switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | MMBT5550LT1G |
|---|---|
| Current - Collector (Ic) (Max) | 0.6 mA |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 60 |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23-3 (TO-236) |
| Power - Max | 225 mW |
| Transistor Type | NPN |
| Vce Saturation (Max) | 250 mV |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
Pricing
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CAD
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