DMN2025U-7

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Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 5.6A I(D), 20V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOT-23, 3 PIN

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DMN2025U-7

Active

Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 5.6A I(D), 20V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, SOT-23, 3 PIN

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMN2025U-7

Current - Continuous Drain (Id) @ 25°C	5.6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	5.9 nC
Input Capacitance (Ciss) (Max) @ Vds	485 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	800 mW
Rds On (Max) @ Id, Vgs	27 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	900 mV

DMN2025UFDB Series

Dual 20V N-Channel Enhancement Mode MOSFET

Part	Power - Max [Max]	Mounting Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Drain to Source Voltage (Vdss)	Configuration	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs (Max)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)
Diodes Inc DMN2025UFDB-13	700 mW	Surface Mount	1 V	6 A	486 pF	U-DFN2020-6 (Type B)	25 mOhm	-55 °C	150 °C	6-UDFN Exposed Pad	20 V	2 N-Channel (Dual)	12.3 nC	MOSFET (Metal Oxide)
Diodes Inc DMN2025U		Surface Mount	900 mV	5.6 A		SOT-23-3	27 mOhm	-55 °C	150 °C	SC-59 SOT-23-3 TO-236-3	20 V			MOSFET (Metal Oxide)	12 V	N-Channel	485 pF	5.9 nC	800 mW	1.8 V 4.5 V
Diodes Inc DMN2025U-7		Surface Mount	900 mV	5.6 A		SOT-23-3	27 mOhm	-55 °C	150 °C	SC-59 SOT-23-3 TO-236-3	20 V			MOSFET (Metal Oxide)	12 V	N-Channel	485 pF	5.9 nC	800 mW	1.8 V 4.5 V
Diodes Inc DMN2025U-13

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.36
		10	$ 0.25
		100	$ 0.13
		500	$ 0.10
		1000	$ 0.08
	Digi-Reel®	1	$ 0.36
		10	$ 0.25
		100	$ 0.13
		500	$ 0.10
		1000	$ 0.08
	Tape & Reel (TR)	3000	$ 0.07
		6000	$ 0.06
		9000	$ 0.05
		30000	$ 0.05
		75000	$ 0.04
		150000	$ 0.04

Description

General part information

DMN2025UFDB Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power-management applications.

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Recommended Soldering Techniques

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