NVD5C632NLT4G
ActiveON Semiconductor
SINGLE N-CHANNEL POWER MOSFET 60V, 155A, 2.5MΩ
NVD5C632NLT4G
ActiveON Semiconductor
SINGLE N-CHANNEL POWER MOSFET 60V, 155A, 2.5MΩ
Description
General part information
NVD5C632NLT4G
Automotive Power MOSFET in a DPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | NVD5C632NLT4G |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 29 A |
| Current - Continuous Drain (Id) (Tc) | 155 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 78 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 5700 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | DPak |
| Power Dissipation (Max) | 4 W, 115 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 2.5 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.1 V |
Pricing
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