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IRFB3307PBF - TO-220AB PKG

IRFB3307PBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL ; TO-220 PACKAGE; 6.3 MOHM;

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IRFB3307PBF - TO-220AB PKG

IRFB3307PBF

Active
Infineon Technologies

IR MOSFET™ N-CHANNEL ; TO-220 PACKAGE; 6.3 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFB3307PBF
Current - Continuous Drain (Id) @ 25°C130 A
Drain to Source Voltage (Vdss)75 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs180 nC
Input Capacitance (Ciss) (Max) @ Vds5150 pF
Mounting TypeThrough Hole
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)200 W
Rds On (Max) @ Id, Vgs6.3 mOhm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.18
10$ 2.07
100$ 1.44
500$ 1.17
1000$ 1.08
2000$ 1.02

Description

General part information

IRFB3307 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources