DMN2310UW-7
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
DMN2310UW-7
ActiveDiodes Inc
N-CHANNEL ENHANCEMENT MODE MOSFET
Description
General part information
DMN2310UW-7
This MOSFET has been designed to minimize on-state resistance(RDS(ON)) yet maintain superior switching performance, making it idealfor high-efficiency power management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2310UW-7 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 1.3 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 1.8 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 0.7 nC, 0.7 nC |
| Input Capacitance (Ciss) (Max) | 38 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SC-70, SOT-323 |
| Package Name | SOT-323 |
| Power Dissipation (Max) | 450 mW |
| Rds On (Max) | 200 mOhm, 200 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 950 mV |
Pricing
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CAD
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Documents
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