TP2635N3-G
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -350V, 15 OHM
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TP2635N3-G
ActiveMOSFET, P-CHANNEL ENHANCEMENT-MODE, -350V, 15 OHM
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Technical Specifications
Parameters and characteristics for this part
| Specification | TP2635N3-G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180 mA |
| Drain to Source Voltage (Vdss) | 350 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 2.5 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 10 V |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 300 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-226-3, TO-92-3 |
| Power Dissipation (Max) | 1 W |
| Rds On (Max) @ Id, Vgs | 15 Ohm |
| Supplier Device Package | TO-92-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bag | 1 | $ 2.00 | |
| 25 | $ 1.66 | |||
| 100 | $ 1.51 | |||
| Microchip Direct | BAG | 1 | $ 2.00 | |
| 25 | $ 1.66 | |||
| 100 | $ 1.51 | |||
| 1000 | $ 1.26 | |||
| 5000 | $ 1.15 | |||
| 10000 | $ 1.09 | |||
TP2635 Series
MOSFET, P-Channel Enhancement-Mode, -350V, 15 Ohm
| Part | Vgs (Max) | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microchip Technology TP2635N3-G | 20 V | 15 Ohm | 350 V | P-Channel | 300 pF | 2 V | 10 V | 2.5 V | TO-92-3 | 180 mA | 1 W | MOSFET (Metal Oxide) | -55 °C | 150 °C | Through Hole | TO-226-3, TO-92-3 |
Description
General part information
TP2635 Series
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Documents
Technical documentation and resources