DMN2310U-7
ActiveDiodes Inc
MOSFET N-CHANNEL ENHANCEMENT 20V 1.6A 3-PIN SOT-23 T/R
DMN2310U-7
ActiveDiodes Inc
MOSFET N-CHANNEL ENHANCEMENT 20V 1.6A 3-PIN SOT-23 T/R
Description
General part information
DMN2310U-7
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2310U-7 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 1.6 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 1.8 V |
| Drive Voltage (Min Rds On) | 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 0.7 nC, 0.7 nC |
| Input Capacitance (Ciss) (Max) | 38 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23-3 |
| Power Dissipation (Max) | 480 mW |
| Rds On (Max) | 175 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 950 mV |
Pricing
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