MJD42CT4
ObsoleteON Semiconductor
6.0 A, 100 V PNP BIPOLAR POWER TRANSISTOR
MJD42CT4
ObsoleteON Semiconductor
6.0 A, 100 V PNP BIPOLAR POWER TRANSISTOR
Description
General part information
MJD42CT4
The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD41C (NPN) and MJD42C (PNP) are complementary devices.
Technical Specifications
Parameters and characteristics for this part
| Specification | MJD42CT4 |
|---|---|
| Current - Collector (Ic) (Max) | 6 A |
| Current - Collector Cutoff (Max) | 50 µA |
| DC Current Gain (hFE) (Min) | 15 |
| Frequency - Transition | 3 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Package Name | DPak |
| Power - Max | 20 W |
| Transistor Type | PNP |
| Vce Saturation (Max) | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
Pricing
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CAD
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Documents
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