2N5401,116

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NXP USA Inc.

TRANS PNP 150V 0.3A TO92-3

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Active

NXP USA Inc.

TRANS PNP 150V 0.3A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	2N5401,116

Current - Collector (Ic) (Max) [Max]	300 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60 hFE
Frequency - Transition	300 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	630 mW
Supplier Device Package	TO-92-3
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	150 V

TRANS PNP 150V 0.3A TO92-3

Part	Power - Max [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Transistor Type	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Current - Collector (Ic) (Max) [Max]
NXP USA Inc. 2N5401,116	630 mW	TO-226-3, TO-92-3	60 hFE	150 °C	TO-92-3	50 nA	300 MHz	PNP	150 V	500 mV	Through Hole	300 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 150 V 300 mA 300MHz 630 mW Through Hole TO-92-3

Technical documentation and resources