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NTHD3100CT1G

NTHD3100CT1G

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ON Semiconductor

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 20 V, 3.9 A, 3.9 A, 0.064 OHM

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NTHD3100CT1G

NTHD3100CT1G

Active
ON Semiconductor

DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 20 V, 3.9 A, 3.9 A, 0.064 OHM

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Description

General part information

NTHD3100CT1G

The NTHD3100CT1G is a N/P-channel Complementary MOSFET ideal for portable battery powered products. The device is designed for DC-to DC conversion circuits, load switch applications requiring level shift and drive small brushless DC motor applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationNTHD3100CT1G
ConfigurationN, P-Channel
Current - Continuous Drain (Id) (Maximum)3.2 A
Current - Continuous Drain (Id) (Typical)2.9 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Max)2.3 nC
Input Capacitance (Ciss) (Max)165 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseFlat Leads, 8-SMD
Package NameChipFET™
Power - Max1.1 W
Rds On (Max)80 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)1.2 V

Pricing

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CAD

3D models and CAD resources for this part