DG2034EDN-T1-GE4

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Vishay General Semiconductor - Diodes Division

POWER DOWN FAULT PROTECTED,1.8VTO 5.

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Vishay General Semiconductor - Diodes Division

POWER DOWN FAULT PROTECTED,1.8VTO 5.

Technical Specifications

Parameters and characteristics for this part

Specification	DG2034EDN-T1-GE4

-3db Bandwidth	166 MHz
Channel-to-Channel Matching (ΔRon)	20 mOhm
Charge Injection	-2.6 pC
Crosstalk	-71 dB
Current - Leakage (IS(off)) (Max) [Max]	2 nA
Mounting Type	Surface Mount
Multiplexer/Demultiplexer Circuit	4:1
Number of Circuits	1
On-State Resistance (Max) [Max]	2.5 Ohms
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	12-VFQFN Exposed Pad
Supplier Device Package	12-QFN (3x3)
Switch Circuit	SP4T
Switch Time (Ton, Toff) (Max) [custom]	20 ns
Switch Time (Ton, Toff) (Max) [custom]	25 ns
Voltage - Supply, Single (V+) [Max]	5.5 V
Voltage - Supply, Single (V+) [Min]	1.8 V

Part	Multiplexer/Demultiplexer Circuit	-3db Bandwidth	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Supplier Device Package	Voltage - Supply, Single (V+) [Min]	Voltage - Supply, Single (V+) [Max]	Crosstalk	On-State Resistance (Max) [Max]	Package / Case	Number of Circuits	Current - Leakage (IS(off)) (Max) [Max]	Switch Time (Ton, Toff) (Max) [custom]	Switch Time (Ton, Toff) (Max) [custom]	Switch Circuit	Charge Injection	Channel-to-Channel Matching (ΔRon)
Vishay General Semiconductor - Diodes Division DG2034EDN-T1-GE4	4:1	166 MHz	85 °C	-40 °C	Surface Mount	12-QFN (3x3)	1.8 V	5.5 V	-71 dB	2.5 Ohms	12-VFQFN Exposed Pad	1	2 nA	20 ns	25 ns	SP4T	-2.6 pC	20 mOhm

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General part information

1 Circuit IC Switch 4:1 2.5Ohm 12-QFN (3x3)

Technical documentation and resources