2N5306
ObsoleteON Semiconductor
TRANS NPN DARL 25V 1.2A TO92-3
2N5306
ObsoleteON Semiconductor
TRANS NPN DARL 25V 1.2A TO92-3
Description
General part information
2N5306
Bipolar (BJT) Transistor NPN - Darlington 25 V 1.2 A 625 mW Through Hole TO-92-3
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5306 |
|---|---|
| Current - Collector (Ic) (Max) | 1.2 A |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 7000 |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Package Name | TO-92-3 |
| Power - Max | 625 mW |
| Transistor Type | NPN, Darlington |
| Vce Saturation (Max) | 1.4 V |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
Pricing
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CAD
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Documents
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