IRF9328TRPBF

Obsolete

Infineon Technologies

IR MOSFET™ P-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 11.9 MOHM;

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Obsolete

Infineon Technologies

IR MOSFET™ P-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 11.9 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF9328TRPBF

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC
Input Capacitance (Ciss) (Max) @ Vds	1680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs [Max]	11.9 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IRF9328TRPBF	4.5 V 10 V	2.5 W	52 nC	P-Channel	12 A	2.4 V	MOSFET (Metal Oxide)	30 V	Surface Mount	1680 pF	8-SO	-55 °C	150 °C	20 V	8-SOIC	3.9 mm	0.154 in	11.9 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 30 V 12A (Tc) 2.5W (Ta) Surface Mount 8-SO

Technical documentation and resources