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DMG1023UV-7 - Package Image for SOT563

DMG1023UV-7

Active
Diodes Inc

DUAL MOSFET, P CHANNEL, 20 V, 20 V, 1.03 A, 1.03 A, 0.5 OHM

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DMG1023UV-7 - Package Image for SOT563

DMG1023UV-7

Active
Diodes Inc

DUAL MOSFET, P CHANNEL, 20 V, 20 V, 1.03 A, 1.03 A, 0.5 OHM

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMG1023UV-7
Configuration2 P-Channel
Current - Continuous Drain (Id) @ 25°C1.03 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]0.62 nC
Input Capacitance (Ciss) (Max) @ Vds59.76 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-666, SOT-563
Power - Max [Max]530 mW
Rds On (Max) @ Id, Vgs750 mOhm
Supplier Device PackageSOT-563
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.28
10$ 0.22
100$ 0.13
500$ 0.12
1000$ 0.09
Digi-Reel® 1$ 0.28
10$ 0.22
100$ 0.13
500$ 0.12
1000$ 0.09
Tape & Reel (TR) 3000$ 0.08

Description

General part information

DMG1023UVQ Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.