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Package Image for SOT89

ZXMN3A01ZTA

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

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Package Image for SOT89

ZXMN3A01ZTA

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET

Find alt

Description

General part information

ZXMN3A01Z Series

TN1.pdf

Technical Specifications

Parameters and characteristics for this part

SpecificationZXMN3A01ZTA
Current - Continuous Drain (Id) (Ta)2.2 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)5 nC, 5 nC
Input Capacitance (Ciss) (Max)186 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-243AA
Package NameSOT-89-3
Power Dissipation (Max)970 mW
Rds On (Max)120 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)1 V

Pricing

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CAD

3D models and CAD resources for this part