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TC4432EPA - 8-PDIP

TC4432EPA

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Microchip Technology

MOSFET DRVR 1.5A 1-OUT HI SIDE NON-INV 8-PIN PDIP TUBE

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TC4432EPA - 8-PDIP

TC4432EPA

Active
Microchip Technology

MOSFET DRVR 1.5A 1-OUT HI SIDE NON-INV 8-PIN PDIP TUBE

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationTC4432EPATC4432 Series
Channel Type-Single
Current - Peak Output (Source, Sink)-1.5 A
Driven Configuration-High-Side, Low-Side
Gate Type-N-Channel, P-Channel MOSFET
Input Type-Non-Inverting
Mounting Type-Surface Mount, Through Hole
null-
Number of Drivers-1
Operating Temperature--40 - 0 °C
Operating Temperature-150 °C
Package / Case-8-SOIC, 8-CDIP, 8-DIP
Package / Case-3.9 mm
Package / Case-0.154 in
Package / Case-7.62 mm
Package / Case-0.3 in
Rise / Fall Time (Typ)-25 ns
Rise / Fall Time (Typ)-33 ns
Supplier Device Package-8-SOIC, 8-CERDIP, 8-PDIP
Voltage - Supply-4.5 V
Voltage - Supply-30 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 4.17
25$ 3.47
100$ 3.16
Microchip DirectTUBE 1$ 4.17
25$ 3.47
100$ 3.16
1000$ 2.63
5000$ 2.44
10000$ 2.26

TC4432 Series

1.5 A MOSFET Gate Driver

PartGate TypeRise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Driven ConfigurationInput TypeSupplier Device PackageCurrent - Peak Output (Source, Sink)Channel TypeMounting TypeNumber of DriversPackage / CasePackage / Case [y]Package / Case [x]Operating Temperature [Min]Operating Temperature [Max]Voltage - Supply [Min]Voltage - Supply [Max]Package / CasePackage / Case
Microchip Technology
TC4432COA
N-Channel, P-Channel MOSFET
25 ns
33 ns
High-Side, Low-Side
Non-Inverting
8-SOIC
1.5 A, 1.5 A
Single
Surface Mount
1
8-SOIC
3.9 mm
0.154 in
0 °C
150 °C
4.5 V
30 VDC
Microchip Technology
TC4432EJA
N-Channel, P-Channel MOSFET
25 ns
33 ns
High-Side, Low-Side
Non-Inverting
8-CERDIP
1.5 A, 1.5 A
Single
Through Hole
1
8-CDIP
-40 °C
150 °C
4.5 V
30 VDC
7.62 mm
0.3 in
Microchip Technology
TC4432VOA
N-Channel, P-Channel MOSFET
25 ns
33 ns
High-Side, Low-Side
Non-Inverting
8-SOIC
1.5 A, 1.5 A
Single
Surface Mount
1
8-SOIC
3.9 mm
0.154 in
-40 °C
150 °C
4.5 V
30 VDC
Microchip Technology
TC4432CPA
Microchip Technology
TC4432EPA
N-Channel, P-Channel MOSFET
25 ns
33 ns
High-Side, Low-Side
Non-Inverting
8-PDIP
1.5 A, 1.5 A
Single
Through Hole
1
8-DIP
-40 °C
150 °C
4.5 V
30 VDC
7.62 mm
0.3 in
Microchip Technology
TC4432EOA713
Microchip Technology
TC4432EPA
Microchip Technology
TC4432EOA713
N-Channel, P-Channel MOSFET
25 ns
33 ns
High-Side, Low-Side
Non-Inverting
8-SOIC
1.5 A, 1.5 A
Single
Surface Mount
1
8-SOIC
3.9 mm
0.154 in
-40 °C
150 °C
4.5 V
30 VDC
Microchip Technology
TC4432CPA
N-Channel, P-Channel MOSFET
25 ns
33 ns
High-Side, Low-Side
Non-Inverting
8-PDIP
1.5 A, 1.5 A
Single
Through Hole
1
8-DIP
0 °C
150 °C
4.5 V
30 VDC
7.62 mm
0.3 in
Microchip Technology
TC4432VOA713
N-Channel, P-Channel MOSFET
25 ns
33 ns
High-Side, Low-Side
Non-Inverting
8-SOIC
1.5 A, 1.5 A
Single
Surface Mount
1
8-SOIC
3.9 mm
0.154 in
-40 °C
150 °C
4.5 V
30 VDC

Description

General part information

TC4432 Series

The TC4431/4432 are 30 V CMOS buffer/gate drivers suitable for use in high-side gate driver applications. They will not latch up under any conditions within their power and voltage ratings. They can accept, without damage or logic upset, up to 300 mA of reverse current (of either polarity) being forced back into their outputs. All terminals are fully protected against up to 4 kV of electrostatic discharge. Under-voltage lockout circuitry forces the output to a "low" state when the input supply voltage drops below 7 V. For operation in lower voltages, disable the lockout and start-up circuit by grounding pin 3(LOCK DIS); for all other situations, pin 3 (LOCK DIS) should be left floating. The under-voltage lockout and start-up circuit gives brown out protection when driving MOSFETs.