FJN3306RBU
ObsoleteON Semiconductor
TRANS PREBIAS NPN 50V TO92-3
FJN3306RBU
ObsoleteON Semiconductor
TRANS PREBIAS NPN 50V TO92-3
Description
General part information
FJN3306RBU
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 300 mW Through Hole TO-92-3
Technical Specifications
Parameters and characteristics for this part
| Specification | FJN3306RBU |
|---|---|
| Current - Collector (Ic) (Max) | 0.1 mA |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 68 |
| Frequency - Transition | 250 MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Package Name | TO-92-3 |
| Power - Max | 300 mW |
| Resistor - Base (R1) Resistance | 10 kOhm |
| Resistor - Emitter Base (R2) | 47 kOhm |
| Transistor Type | Pre-Biased, NPN |
| Vce Saturation (Max) | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available