Zenode.ai Logo
MTD6N20ET4

MTD6N20ET4

Obsolete
ON Semiconductor

POWER MOSFET 200V 6A 700 MOHM SINGLE N-CHANNEL DPAK

Find alt
MTD6N20ET4

MTD6N20ET4

Obsolete
ON Semiconductor

POWER MOSFET 200V 6A 700 MOHM SINGLE N-CHANNEL DPAK

Find alt

Description

General part information

MTD6N20ET4

This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

Technical Specifications

Parameters and characteristics for this part

SpecificationMTD6N20ET4
Current - Continuous Drain (Id) (Tc)6 A
Drain to Source Voltage (Vdss)200 V
FET TypeN-Channel
Gate Charge (Max)21 nC
Input Capacitance (Ciss) (Max)480 pF
Mounting TypeSurface Mount
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameDPak
Rds On (Max)0.7 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Sign in to see pricing

Create a free account to access distributor pricing data.

CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources