Zenode.ai Logo
Beta
K
ISP26DP06NMSATMA1 - PG-SOT223

ISP26DP06NMSATMA1

Active
Infineon Technologies

P-CHANNEL SMALL SIGNAL MOSFET -60 V ; SOT223-3 PACKAGE; 260 MOHM;

Deep-Dive with AI

Search across all available documentation for this part.

ISP26DP06NMSATMA1 - PG-SOT223

ISP26DP06NMSATMA1

Active
Infineon Technologies

P-CHANNEL SMALL SIGNAL MOSFET -60 V ; SOT223-3 PACKAGE; 260 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationISP26DP06NMSATMA1
Current - Continuous Drain (Id) @ 25°C1.9 A
Drain to Source Voltage (Vdss)60 V
FET TypeP-Channel
Mounting TypeSurface Mount
Package / CaseTO-261AA, TO-261-4
Supplier Device PackagePG-SOT223
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.57
10$ 0.39
100$ 0.26
500$ 0.21
1000$ 0.19
Digi-Reel® 1$ 0.57
10$ 0.39
100$ 0.26
500$ 0.21
1000$ 0.19
Tape & Reel (TR) 3000$ 0.16
6000$ 0.15
9000$ 0.13
15000$ 0.13
21000$ 0.13
30000$ 0.12
NewarkEach (Supplied on Cut Tape) 1$ 0.63
10$ 0.45
25$ 0.41
50$ 0.37
100$ 0.33

Description

General part information

ISP26DP06 Series

OptiMOS™ P-channel small signal MOSFETs60V in SOT-223 package is the new technology targeted forconsumer applications. The main advantage of a P-channel small signal device is the reduction of design complexity in medium and low power applications. Enabling fast switching, avalanche ruggedness and an easy interface to microcontroller unit (MCU), also featuring a very low on-resistance RDS(on).It is available in logic level.

Documents

Technical documentation and resources