1SS83TD-E
ActiveRenesas Electronics Corporation
DIODE 250V 200MA DO35
1SS83TD-E
ActiveRenesas Electronics Corporation
DIODE 250V 200MA DO35
Description
General part information
1SS83TD-E
Diode 250 V 200mA Through Hole DO-35
Technical Specifications
Parameters and characteristics for this part
| Specification | 1SS83TD-E |
|---|---|
| Capacitance | 1.5 pF |
| Current - Average Rectified (Io) | 200 mA |
| Current - Reverse Leakage | 200 nA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 175 °C |
| Package / Case | Axial, DO-35, DO-204AH |
| Package Name | DO-35 |
| Reverse Recovery Time (trr) | 100 ns |
| Voltage - DC Reverse (Vr) (Max) | 250 V |
| Voltage - Forward (Vf) (Max) | 1 V |
Pricing
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