DMP3056LSDQ-13
ActiveDiodes Inc
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMP3056LSDQ-13
ActiveDiodes Inc
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Description
General part information
DMP3056LSDQ-13
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP3056LSDQ-13 |
|---|---|
| Channel Count | 2 |
| Configuration | P-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) (Ta) | 6.9 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Max) | 13.7 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 722 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC, 8-SO |
| Package Width | 3.9 mm |
| Power - Max | 2.5 VA |
| Qualification | AEC-Q101 |
| Rds On (Max) | 45 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 2.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources