G170P03S2

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Goford Semiconductor

MOSFET P+P-CH 30V 11A SOP-8 DUAL

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Goford Semiconductor

MOSFET P+P-CH 30V 11A SOP-8 DUAL

Technical Specifications

Parameters and characteristics for this part

Specification	G170P03S2

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	9 A, 11 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs [Max]	40 nC, 18 nC
Input Capacitance (Ciss) (Max) @ Vds	1786 pF, 1786 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C, 150 °C
Operating Temperature [Min]	-55 °C, -55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	18 mOhm, 25 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

MOSFET P+P-CH 30V 11A SOP-8 DUAL

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
Goford Semiconductor G170P03S2	1786 pF, 1786 pF	18 mOhm, 25 mOhm	MOSFET (Metal Oxide)	Surface Mount	8-SOIC	3.9 mm	0.154 in	8-SOP	150 °C, 150 °C	-55 °C, -55 °C	9 A, 11 A	2 P-Channel	18 nC, 40 nC	1.4 W	2.5 V	30 V

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