DMN2008LFU-13
ActiveDiodes Inc
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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DMN2008LFU-13
ActiveDiodes Inc
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2008LFU-13 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 14.5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 42.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1418 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UFDFN Exposed Pad |
| Power - Max [Max] | 1 W |
| Rds On (Max) @ Id, Vgs | 5.4 mOhm |
| Supplier Device Package | U-DFN2030-6 (Type B) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 0.24 | |
| 6000 | $ 0.23 | |||
| 9000 | $ 0.22 | |||
| 15000 | $ 0.21 | |||
Description
General part information
DMN2008LFU Series
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources