Specification	APT50GT120B2RDQ2G

Current - Collector (Ic) (Max)	94 A
Current - Collector Pulsed (Icm)	150 A
Gate Charge	340 nC
IGBT Type	NPT
Input Type	Standard
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Power - Max	625 W
Switching Energy	2330 µJ
Switching Energy (Off)	2.33 mJ
Td (off) @ 25°C	230 ns
Td (on) @ 25°C	24 ns
Test Condition Current	50 A
Test Condition Resistance	4.7 Ohm
Test Condition Voltage	800 V
Test Condition Voltage (Secondary)	15 V
Vce(on) (Max)	3.7 V
Voltage - Collector Emitter Breakdown (Max)	1200 V

IGBT-NPT-1200V Series

Part	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	Technology	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Gate Charge (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Package Name	Package / Case
Microchip Technology APT40M70JVR	70 mOhm	10 V	Chassis Mount	30 V	53 A	8890 pF	MOSFET (Metal Oxide)	450 W	-55 °C	150 °C	N-Channel	495 nC	4 V	400 V	SOT-227 (ISOTOP®)	miniBLOC SOT-227-4

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