IRFS3206TRRPBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 3 MOHM;

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 3 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS3206TRRPBF

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6540 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs [Max]	3 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs [Max]	FET Type	Technology	Drain to Source Voltage (Vdss)
Infineon Technologies IRFS3206TRRPBF	4 V	10 V	300 W	-55 °C	175 ░C	120 A	170 nC	20 V	6540 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	Surface Mount	3 mOhm	N-Channel	MOSFET (Metal Oxide)	60 V

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General part information

N-Channel 60 V 120A (Tc) 300W (Tc) Surface Mount D2PAK

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