IRFS3307ZTRLPBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 5.8 MOHM;

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 5.8 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRFS3307ZTRLPBF

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	4750 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs	5.8 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Drain to Source Voltage (Vdss)	FET Type	Power Dissipation (Max) [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
Infineon Technologies IRFS3307ZTRRPBF	110 nC	Surface Mount	75 V	N-Channel	230 W	MOSFET (Metal Oxide)	10 V	20 V	120 A	5.8 mOhm	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	4 V	4750 pF
Infineon Technologies IRFS3307TRLPBF		Surface Mount	75 V	N-Channel		MOSFET (Metal Oxide)	10 V	20 V	120 A	6.3 mOhm	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	4 V	5150 pF	180 nC	200 W
Infineon Technologies IRFS3307ZTRLPBF	110 nC	Surface Mount	75 V	N-Channel	230 W	MOSFET (Metal Oxide)	10 V	20 V	120 A	5.8 mOhm	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	4 V	4750 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly