DMG7702SFG-13

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Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 9.5A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC, POWERDI3333-8, 8 PIN

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DMG7702SFG-13

Active

Diodes Inc

SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 9.5A I(D), 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC, POWERDI3333-8, 8 PIN

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Technical Specifications

Parameters and characteristics for this part

Specification	DMG7702SFG-13

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	14.7 nC
Input Capacitance (Ciss) (Max) @ Vds	4310 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	890 mW
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

DMG7702SFG Series

NRND = Not Recommended for New Design

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Feature	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs
Diodes Inc DMG7702SFG-13	N-Channel	12 A	Surface Mount	-55 °C	150 °C	14.7 nC	30 V	8-PowerVDFN	2.5 V	4310 pF	MOSFET (Metal Oxide)	Schottky Diode (Body)	POWERDI3333-8	20 V	890 mW	4.5 V 10 V	10 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

DMG7702SFG Series

This new generation 30V N channel enhancement mode MOSFET DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: