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Package Image for V-DFN5045-12

DMHC10H170SFJ-13

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Diodes Inc

100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

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Package Image for V-DFN5045-12

DMHC10H170SFJ-13

Active
Diodes Inc

100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

Find alt

Description

General part information

DMHC10H170SFJ-13

100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

Technical Specifications

Parameters and characteristics for this part

SpecificationDMHC10H170SFJ-13
Channel Count2
Configuration2 N, 2 P-Channel (Full Bridge), N, P-Channel
Configuration - FeaturesFull Bridge
Current - Continuous Drain (Id) (Maximum)2.3 A
Current - Continuous Drain (Id) (Typical)2.9 A, 2.9 A
Drain to Source Voltage (Vdss)100 V
Gate Charge (Max)9.7 nC, 9.7 nC
Input Capacitance (Ciss) (Max)1167 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case12-VDFN Exposed Pad
Package NameV-DFN5045-12
Power - Max2.1 W
Rds On (Max)160 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)3 V

Pricing

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CAD

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