
DMHC10H170SFJ-13
ActiveDiodes Inc
100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

DMHC10H170SFJ-13
ActiveDiodes Inc
100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Description
General part information
DMHC10H170SFJ-13
100V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Technical Specifications
Parameters and characteristics for this part
| Specification | DMHC10H170SFJ-13 |
|---|---|
| Channel Count | 2 |
| Configuration | 2 N, 2 P-Channel (Full Bridge), N, P-Channel |
| Configuration - Features | Full Bridge |
| Current - Continuous Drain (Id) (Maximum) | 2.3 A |
| Current - Continuous Drain (Id) (Typical) | 2.9 A, 2.9 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Max) | 9.7 nC, 9.7 nC |
| Input Capacitance (Ciss) (Max) | 1167 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 12-VDFN Exposed Pad |
| Package Name | V-DFN5045-12 |
| Power - Max | 2.1 W |
| Rds On (Max) | 160 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 3 V |
Pricing
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CAD
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