Specification	APT8030LVFRG

Current - Continuous Drain (Id) (Tc)	27 A
Drain to Source Voltage (Vdss)	800 V
FET Type	N-Channel
Gate Charge (Max)	510 nC, 510 nC
Input Capacitance (Ciss) (Max)	7900 pF
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Package Name	TO-264 (L), TO-264 [L]
Rds On (Max)	300 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	4 V

FREDFET-800V Series

Part	Power Dissipation (Max)	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	FET Type	Mounting Type	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Package Name	Rds On (Max)	Drain to Source Voltage (Vdss)	Package / Case
Microchip Technology APT53F80J	960 W	MOSFET (Metal Oxide)	10 V	17550 pF	30 V	-55 °C	150 °C	570 nC	N-Channel	Chassis Mount	57 A	5 V	ISOTOP®	110 mOhm	800 V	miniBLOC SOT-227-4
Microchip Technology APT8020JFLL		MOSFET (Metal Oxide)		5200 pF		-55 °C	150 °C	195 nC	N-Channel	Chassis Mount	33 A	5 V	ISOTOP®	220 mOhm	800 V	miniBLOC SOT-227-4
Microchip Technology APT38F80B2	1040 W	MOSFET (Metal Oxide)	10 V	8070 pF	30 V	-55 °C	150 °C	260 nC	N-Channel	Through Hole	41 A	5 V	T-MAX™ [B2]	240 mOhm	800 V	TO-247-3 Variant
Microchip Technology APT11F80B	337 W	MOSFET (Metal Oxide)	10 V		30 V	-55 °C	150 °C	80 nC 80 nC	N-Channel	Through Hole	12 A	5 V	TO-247 [B]	900 mOhm	800 V	TO-247-3
Microchip Technology APT8043BFLLG		MOSFET (Metal Oxide)		2500 pF				85 nC	N-Channel	Through Hole	20 A	5 V	TO-247 [B]	0.43 Ohm	800 V	TO-247-3
Microchip Technology APT8052BFLLG		MOSFET (Metal Oxide)		2035 pF				75 nC	N-Channel	Through Hole	15 A	5 V	TO-247 [B]	520 mOhm	800 V	TO-247-3
Microchip Technology APT8020B2FLLG		MOSFET (Metal Oxide)		5200 pF				195 nC	N-Channel	Through Hole	38 A	5 V	T-MAX™ [B2]	220 mOhm	800 V	TO-247-3 Variant
Microchip Technology APT22F80S	625 W	MOSFET (Metal Oxide)	10 V	4595 pF	30 V	-55 °C	150 °C	150 nC	N-Channel	Surface Mount	23 A	5 V	D3PAK	430 mOhm	800 V	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA
Microchip Technology APT17F80B	500 W	MOSFET (Metal Oxide)	10 V	3757 pF	30 V	-55 °C	150 °C	122 nC 122 nC	N-Channel	Through Hole	18 A	5 V	TO-247 [B]	580 mOhm	800 V	TO-247-3
Microchip Technology APT8024LFLLG	565 W	MOSFET (Metal Oxide)	10 V	4670 pF	30 V	-55 °C	150 °C	160 nC	N-Channel	Through Hole	31 A	5 V	TO-264 (L) TO-264 [L]	260 mOhm	800 V	TO-264-3 TO-264AA