FGH25T120SMD-F155
ActiveON Semiconductor
IGBT, 1200V, 25A FIELD STOP TRENCH
FGH25T120SMD-F155
ActiveON Semiconductor
IGBT, 1200V, 25A FIELD STOP TRENCH
Description
General part information
FGH25T120SMD-F155
Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | FGH25T120SMD-F155 |
|---|---|
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 100 A |
| Gate Charge | 225 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3 |
| Power - Max | 428 W |
| Reverse Recovery Time (trr) | 60 ns |
| Switching Energy (Off) | 560 µJ |
| Switching Energy (On) | 1.74 mJ |
| Td (off) @ 25°C | 490 ns |
| Td (on) @ 25°C | 40 ns |
| Test Condition Current | 25 A |
| Test Condition Resistance | 23 Ohm |
| Test Condition Voltage | 600 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.4 V |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Pricing
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CAD
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Documents
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