BYV60W-600PQ
ActiveWeEn Semiconductors Co., Ltd
DIODE GEN PURP 600V 60A TO247-2
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BYV60W-600PQ
ActiveWeEn Semiconductors Co., Ltd
DIODE GEN PURP 600V 60A TO247-2
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BYV60W-600PQ |
|---|---|
| Current - Average Rectified (Io) | 60 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 °C |
| Package / Case | TO-247-2 |
| Reverse Recovery Time (trr) | 55 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-247-2 |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 2.28 | |
| 30 | $ 1.80 | |||
| 120 | $ 1.55 | |||
| 510 | $ 1.51 | |||
Description
General part information
BYV60W-600PQ
Diode 600 V 60A Through Hole TO-247-2
Documents
Technical documentation and resources
No documents available