IRFP260NPBF
ActivePOWER MOSFET, N CHANNEL, 200 V, 50 A, 0.04 OHM, TO-247AC, THROUGH HOLE
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IRFP260NPBF
ActivePOWER MOSFET, N CHANNEL, 200 V, 50 A, 0.04 OHM, TO-247AC, THROUGH HOLE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IRFP260NPBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50 A |
| Drain to Source Voltage (Vdss) | 200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 234 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4057 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) [Max] | 300 W |
| Rds On (Max) @ Id, Vgs | 40 mOhm |
| Supplier Device Package | TO-247AC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IRFP260 Series
The IRFP260NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.