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1N6630US

1N6630US

Active
Microchip Technology

990V UFR,FRR SQ SMT B-BODY SQ. MELF ROHS COMPLIANT: YES

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1N6630US

1N6630US

Active
Microchip Technology

990V UFR,FRR SQ SMT B-BODY SQ. MELF ROHS COMPLIANT: YES

Find alt

Description

General part information

1N6630 Series

This "Ultrafast Recovery" rectifier diode series is military qualified to MIL-PRF19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal "Category I" metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a "US" suffix (see separate data sheet for 1N6626US thru 1N6631US). Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

Technical Specifications

Parameters and characteristics for this part

Specification1N6630US
Current - Average Rectified (Io)1.4 A
Current - Reverse Leakage4 µA
Mounting TypeSurface Mount
Operating Temperature - Junction (Max)150 °C
Operating Temperature - Junction (Min)-65 °C
Package / CaseE, SQ-MELF
Package NameD-5B
Reverse Recovery Time (trr)50 ns
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)900 V
Voltage - Forward (Vf) (Max)1.7 V

Pricing

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