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DMC2990UDJ-7 - Package Image for SOT963

DMC2990UDJ-7

Active
Diodes Inc

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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DMC2990UDJ-7 - Package Image for SOT963

DMC2990UDJ-7

Active
Diodes Inc

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMC2990UDJ-7
ConfigurationN and P-Channel
Current - Continuous Drain (Id) @ 25°C310 mA, 450 mA
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]0.5 nC
Input Capacitance (Ciss) (Max) @ Vds27.6 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-963
Power - Max [Max]350 mW
Rds On (Max) @ Id, Vgs [Max]990 mOhm
Supplier Device PackageSOT-963
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.29
10$ 0.23
100$ 0.14
500$ 0.13
1000$ 0.09
Digi-Reel® 1$ 0.29
10$ 0.23
100$ 0.14
500$ 0.13
1000$ 0.09
Tape & Reel (TR) 10000$ 0.09

Description

General part information

DMC2990UDJQ Series

This new generation 20V N + P channel enhancement mode MOSFET has been designed to minimise RDS(on)and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.