JANSM2N3019
ActiveMicrochip Technology
RH SMALL-SIGNAL BJT
JANSM2N3019
ActiveMicrochip Technology
RH SMALL-SIGNAL BJT
Description
General part information
JANSM2N3019
Bipolar (BJT) Transistor NPN 80 V 1 A 800 mW Through Hole TO-5AA
Technical Specifications
Parameters and characteristics for this part
| Specification | JANSM2N3019 |
|---|---|
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 10 nA |
| DC Current Gain (hFE) (Min) | 100 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-5-3 Metal Can, TO-205AA |
| Package Name | TO-5AA |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500, 391 |
| Transistor Type | NPN |
| Vce Saturation (Max) | 500 mV |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
Pricing
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CAD
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