GCMS080B120S1-E1

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SemiQ

SIC 1200V 80M MOSFET & 10A SBD S

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SemiQ

SIC 1200V 80M MOSFET & 10A SBD S

Technical Specifications

Parameters and characteristics for this part

Specification	GCMS080B120S1-E1

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	1200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	58 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1374 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	142 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	SOT-227
Vgs (Max) [Max]	25 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	4 V

SIC 1200V 80M MOSFET & 10A SBD S

Part	Vgs (Max) [Min]	Vgs (Max) [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	FET Type	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Current - Continuous Drain (Id) @ 25°C
SemiQ GCMS080B120S1-E1	-10 V	25 V	142 W	1200 V	1374 pF	58 nC	-55 °C	175 ░C	4 V	SOT-227	N-Channel	SOT-227-4, miniBLOC	100 mOhm	Chassis Mount	30 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 1200 V 30A (Tc) 142W (Tc) Chassis Mount SOT-227

Technical documentation and resources