ISZ0803NLSATMA1

Infineon Technologies

OPTIMOS™ PD POWER MOSFET ISZ0803NLS IN THE PQFN 3.3X3.3 PACKAGE OFFERS FAST RAMP-UP AND OPTIMIZED LEAD TIMES.

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DocumentsDatasheet ISZ0803NLS

ISZ0803NLSATMA1

Infineon Technologies

OPTIMOS™ PD POWER MOSFET ISZ0803NLS IN THE PQFN 3.3X3.3 PACKAGE OFFERS FAST RAMP-UP AND OPTIMIZED LEAD TIMES.

Deep-Dive with AI

DocumentsDatasheet ISZ0803NLS

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	ISZ0803NLSATMA1

Current - Continuous Drain (Id) @ 25°C	7.7 A, 37 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	43 W, 2.1 W
Rds On (Max) @ Id, Vgs [Max]	16.9 mOhm
Supplier Device Package	PG-TSDSON-8-26
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

ISZ0803N Series

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	FET Type	Package / Case	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)
Infineon Technologies ISZ0803NLSATMA1	1000 pF	2.3 V	Surface Mount	4.5 V 10 V	PG-TSDSON-8-26	-55 °C	150 °C	7.7 A 37 A	20 V	16.9 mOhm	N-Channel	8-PowerTDFN	2.1 W 43 W	MOSFET (Metal Oxide)	100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.69
		10	$ 1.08
		100	$ 0.72
		500	$ 0.57
		1000	$ 0.52
		2000	$ 0.48
	Digi-Reel®	1	$ 1.69
		10	$ 1.08
		100	$ 0.72
		500	$ 0.57
		1000	$ 0.52
		2000	$ 0.48
	Tape & Reel (TR)	5000	$ 0.43
		10000	$ 0.43

Description

General part information

ISZ0803N Series

OptiMOS™ PD power MOSFETis Infineon’s portfolio targetingUSB-PDandadapter applications. ISZ0803NLS in the PQFN 3.3x3.3 package offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction.OptiMOS™ PDfeatures quality products in compact, lightweight packages.