IRFR9014N

Obsolete

Infineon Technologies

MOSFET P-CH 60V 5.1A DPAK

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Obsolete

Infineon Technologies

MOSFET P-CH 60V 5.1A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRFR9014N

Current - Continuous Drain (Id) @ 25°C	5.1 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	270 pF
Mounting Type	Surface Mount
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	25 W, 2.5 W
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Technology
Infineon Technologies IRFR9014N	20 V	2.5 W 25 W	500 mOhm	TO-252AA (DPAK)	5.1 A	P-Channel	60 V	12 nC	4 V	270 pF	10 V	Surface Mount	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 5.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount TO-252AA (DPAK)

Technical documentation and resources