BYR29X-800PQ
ActiveWeEn Semiconductors Co., Ltd
DIODE GEN PURP 800V 8A TO220FP
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BYR29X-800PQ
ActiveWeEn Semiconductors Co., Ltd
DIODE GEN PURP 800V 8A TO220FP
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BYR29X-800PQ |
|---|---|
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 °C |
| Package / Case | TO-220-2 Full Pack, Isolated Tab |
| Reverse Recovery Time (trr) | 55 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-220FP |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 6000 | $ 0.33 | |
Description
General part information
BYR29X-800PQ
Diode 800 V 8A Through Hole TO-220FP
Documents
Technical documentation and resources
No documents available