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DMHC4035LSD-13 - 8 SO

DMHC4035LSD-13

Active
Diodes Inc

40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

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DMHC4035LSD-13 - 8 SO

DMHC4035LSD-13

Active
Diodes Inc

40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMHC4035LSD-13
Configuration2 N and 2 P-Channel (Full Bridge)
Current - Continuous Drain (Id) @ 25°C4.5 A, 3.7 A
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs12.5 nC
Gate Charge (Qg) (Max) @ Vgs11.1 nC
Input Capacitance (Ciss) (Max) @ Vds574 pF, 587 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power - Max [Max]1.5 W
Rds On (Max) @ Id, Vgs65 mOhm, 45 mOhm
Supplier Device Package8-SO
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.85
10$ 0.69
100$ 0.54
500$ 0.46
1000$ 0.37
Digi-Reel® 1$ 0.85
10$ 0.69
100$ 0.54
500$ 0.46
1000$ 0.37
Tape & Reel (TR) 2500$ 0.35
5000$ 0.33
12500$ 0.33
NewarkEach (Supplied on Cut Tape) 1$ 0.81
10$ 0.81
25$ 0.77
50$ 0.72
100$ 0.68
250$ 0.65
500$ 0.62
1000$ 0.60

Description

General part information

DMHC4035LSDQ Series

This new generation complementary MOSFET H-Bridge features 2 N and 2 P channel in an SOIC package.