NVMJST1D4N06CLTXG
ActiveON Semiconductor
SINGLE N-CHANNEL POWER MOSFET 60V, 198, 1.49 MΩ ON TOP COOL PACKAGE
NVMJST1D4N06CLTXG
ActiveON Semiconductor
SINGLE N-CHANNEL POWER MOSFET 60V, 198, 1.49 MΩ ON TOP COOL PACKAGE
Description
General part information
NVMJST1D4N06CLTXG
Automotive Power MOSFET in a TCPAK5x7 package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Technical Specifications
Parameters and characteristics for this part
| Specification | NVMJST1D4N06CLTXG |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 42 A |
| Current - Continuous Drain (Id) (Tc) | 198 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 92.2 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 6555 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package Length | 0.209 in |
| Package Name | 10-TCPAK, 10-PowerLSOP |
| Package Width | 5.3 mm |
| Power Dissipation (Max) | 5.3 W, 116 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 1.49 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2 V |
Pricing
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