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SMUN2211T1G

SMUN2211T1G

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ON Semiconductor

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, SINGLE NPN, 50 V, 100 MA, 10 KOHM, 10 KOHM

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SMUN2211T1G

SMUN2211T1G

Active
ON Semiconductor

BIPOLAR PRE-BIASED / DIGITAL TRANSISTOR, SINGLE NPN, 50 V, 100 MA, 10 KOHM, 10 KOHM

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Description

General part information

SMUN2211T1G

This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

Technical Specifications

Parameters and characteristics for this part

SpecificationSMUN2211T1G
Current - Collector (Ic) (Max)0.1 mA
Current - Collector Cutoff (Max)500 nA
DC Current Gain (hFE) (Min)35
GradeAutomotive
Mounting TypeSurface Mount
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameSC-59
Power - Max230 mW
QualificationAEC-Q101
Resistor - Base (R1) Resistance10 kOhm
Resistor - Emitter Base (R2)10 kOhms
Transistor TypePre-Biased, NPN
Vce Saturation (Max)250 mV
Voltage - Collector Emitter Breakdown (Max)50 V

Pricing

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CAD

3D models and CAD resources for this part

    SMUN2211T1G | ON Semiconductor | Zenode.ai