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JANS1N5614

JANS1N5614

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Microchip Technology

DIODE GEN PURP 200V 1A A AXIAL

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JANS1N5614

JANS1N5614

Active
Microchip Technology

DIODE GEN PURP 200V 1A A AXIAL

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Description

General part information

JANS1N5614

Diode 200 V 1A Through Hole A, Axial

Technical Specifications

Parameters and characteristics for this part

SpecificationJANS1N5614
Current - Average Rectified (Io)1 A
Current - Reverse Leakage500 nA
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)200 °C
Operating Temperature - Junction (Min)-65 °C
Package / CaseA, Axial
Package NameA, Axial
QualificationMIL-PRF-19500, 427
Reverse Recovery Time (trr)2 µs
SpeedStandard Recovery
Speed - Fast Recovery (Minimum)200 mA, 500 ns
Speed - Recovery Current200 mA, 200 mA
Speed - Recovery Time500 ns
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max)1.3 V

Pricing

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