Zenode.ai Logo
Beta
K
XPH4R714MC,L1XHQ - 8-PowerVDFN PKG

XPH4R714MC,L1XHQ

Active
Toshiba Semiconductor and Storage

MOSFET P-CH 40V 60A 8SOP

Deep-Dive with AI

Search across all available documentation for this part.

XPH4R714MC,L1XHQ - 8-PowerVDFN PKG

XPH4R714MC,L1XHQ

Active
Toshiba Semiconductor and Storage

MOSFET P-CH 40V 60A 8SOP

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationXPH4R714MC,L1XHQ
Current - Continuous Drain (Id) @ 25°C60 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]160 nC
Input Capacitance (Ciss) (Max) @ Vds5640 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)132 W, 960 mW
Rds On (Max) @ Id, Vgs4.7 mOhm
Supplier Device Package8-SOP Advance (5x5)
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]10 V
Vgs (Max) [Min]-20 V
Vgs(th) (Max) @ Id2.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.77
10$ 1.14
100$ 0.78
500$ 0.71
Digi-Reel® 1$ 1.77
10$ 1.14
100$ 0.78
500$ 0.71
Tape & Reel (TR) 5000$ 0.71

Description

General part information

XPH4R714MC,L1XHQ

P-Channel 40 V 60A (Ta) 960mW (Ta), 132W (Tc) Surface Mount 8-SOP Advance (5x5)

Documents

Technical documentation and resources

No documents available