Specification	APT6010B2LLG

Current - Continuous Drain (Id) (Tc)	54 A, 54 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	150 nC
Input Capacitance (Ciss) (Max)	6710 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3 Variant
Package Name	T-MAX™ [B2]
Power Dissipation (Max)	690 W
Rds On (Max)	100 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

APT6010 Series

Part	Technology	Drain to Source Voltage (Vdss)	Rds On (Max)	Gate Charge (Max)	Vgs(th) (Max)	FET Type	Mounting Type	Input Capacitance (Ciss) (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Package / Case
Microchip Technology APT6025BVRG	MOSFET (Metal Oxide)	600 V	250 mOhm	275 nC	4 V	N-Channel	Through Hole	5160 pF	TO-247 [B]	25 A 25 A	TO-247-3
Microchip Technology APT6025SVRG	MOSFET (Metal Oxide)	600 V	250 mOhm	275 nC	4 V	N-Channel	Surface Mount	5160 pF	D3PAK	25 A 25 A	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA

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